THE CALCULATION OF TWO-DIMENSIONAL PARASITIC RESISTANCE AND CAPACITANCE WITH REALISTIC SHAPES BY USING THE BOUNDARY ELEMENT METHOD

Because the progress of VLSI technology is very fast, it is very important to accurately extract the parasitic resistance and capacitance with any realistic shapes. In this paper, a simulator using the Boundary Element Method (BEM) is presented. It employs the arc spline to approximate any curves for keeping the global continuity of the first order and eliminating puzzle of large deflection and multivalues. A method of multiple normal derivative treating the corners formed by two segments of straight line is expanded to these corners which contain one or two curve segments. The numerical results show that the simulator is feasible.