Advanced Search
Zhang Zhang, Wei Yadong, Ge Zhiheng, Yan Lin, Zeng Jianmin, Liu Gang. Modeling and Circuit Simulation of Four-Terminal Memristor[J]. Journal of Computer-Aided Design & Computer Graphics, 2021, 33(7): 1126-1131. DOI: 10.3724/SP.J.1089.2021.18626
Citation: Zhang Zhang, Wei Yadong, Ge Zhiheng, Yan Lin, Zeng Jianmin, Liu Gang. Modeling and Circuit Simulation of Four-Terminal Memristor[J]. Journal of Computer-Aided Design & Computer Graphics, 2021, 33(7): 1126-1131. DOI: 10.3724/SP.J.1089.2021.18626

Modeling and Circuit Simulation of Four-Terminal Memristor

  • To replace the MOSFET in digital circuits,a four-terminal memristor model is proposed based on the traditional two-terminal memristor,whose four terminals respectively correspond to the gate,source,drain and substrate of the MOSFET.The model described by Verilog-A is used to construct NAND,NOR,etc.logic gate circuits,1 R-1 R random access circuit of 1 bit data in the software environment of Hspice.And the simple application of four-terminal memristor in digital circuits is realized at the simulation level.The experimental results are in line with expectations.As a kind of nanodevice compared with the MOSFET,the four-terminal memristor has greater advantages in terms of small size and low power consumption.With the size of CMOS process gradually approaching the limit,the application of the four-terminal memristor is a reasonable direction.
  • loading

Catalog

    Turn off MathJax
    Article Contents

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return