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张章, 魏亚东, 葛志恒, 闫林, 曾剑敏, 刘钢. 对四端忆阻器的建模及其电路仿真[J]. 计算机辅助设计与图形学学报, 2021, 33(7): 1126-1131. DOI: 10.3724/SP.J.1089.2021.18626
引用本文: 张章, 魏亚东, 葛志恒, 闫林, 曾剑敏, 刘钢. 对四端忆阻器的建模及其电路仿真[J]. 计算机辅助设计与图形学学报, 2021, 33(7): 1126-1131. DOI: 10.3724/SP.J.1089.2021.18626
Zhang Zhang, Wei Yadong, Ge Zhiheng, Yan Lin, Zeng Jianmin, Liu Gang. Modeling and Circuit Simulation of Four-Terminal Memristor[J]. Journal of Computer-Aided Design & Computer Graphics, 2021, 33(7): 1126-1131. DOI: 10.3724/SP.J.1089.2021.18626
Citation: Zhang Zhang, Wei Yadong, Ge Zhiheng, Yan Lin, Zeng Jianmin, Liu Gang. Modeling and Circuit Simulation of Four-Terminal Memristor[J]. Journal of Computer-Aided Design & Computer Graphics, 2021, 33(7): 1126-1131. DOI: 10.3724/SP.J.1089.2021.18626

对四端忆阻器的建模及其电路仿真

Modeling and Circuit Simulation of Four-Terminal Memristor

  • 摘要: 在传统二端忆阻器的理论基础上,提出了一种四端忆阻器的模型.该器件的4个端口分别对应于MOS场效应晶体管的栅、源、漏和衬底4个极,可以代替数字电路中的MOS晶体管实现电路功能.利用Verilog-A对该模型的电学特性进行了描述,在Hspice软件环境中利用该模型构建了与非、或非等逻辑电路以及1 bit数据的1R-1R随机存取电路,并搭建外围电路对其进行了功能验证,在仿真层面实现了四端忆阻器在数字电路方面的简单应用,实验结果符合预期.作为一种纳米器件,与MOS晶体管相比,四端忆阻器的尺寸更小、功耗更低.在CMOS工艺尺寸渐渐趋于极限的今天,对四端忆阻器的应用是一个具有一定合理性的发展方向.

     

    Abstract: To replace the MOSFET in digital circuits,a four-terminal memristor model is proposed based on the traditional two-terminal memristor,whose four terminals respectively correspond to the gate,source,drain and substrate of the MOSFET.The model described by Verilog-A is used to construct NAND,NOR,etc.logic gate circuits,1 R-1 R random access circuit of 1 bit data in the software environment of Hspice.And the simple application of four-terminal memristor in digital circuits is realized at the simulation level.The experimental results are in line with expectations.As a kind of nanodevice compared with the MOSFET,the four-terminal memristor has greater advantages in terms of small size and low power consumption.With the size of CMOS process gradually approaching the limit,the application of the four-terminal memristor is a reasonable direction.

     

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