Abstract: In nanometer digital latches,multiple-node upsets(MNU)are likely to occur.Although some existing ra-diation hardening by design(RHBD)latches based on the interlocked cells can recover all MNUs,they require more sensitive nodes and transistors.To obtain higher reliability and lower hardware redundancy,the radiation upset mechanism is utilized.First,the masked transistors are used to reduce the number of sensitive nodes,thus reducing the number of transistors.Second,two cells are interlocked by using their pull-up transistors,and then a RHBD latch with the MNU tolerance capability is proposed.Compared with the existing RHBD latches based on the interlocking techniques in 65 nm process,the proposed latch can reduce 12.82%area,319.22%delay and 10.66%power on av-erage.