Abstract: As integrated circuit enters nanometer scale,the number of grains in the metal gate decreased significantly,and the work-function variability(WFV)has played an important role on the performance of the MOSFET devices.In this paper,the statistical analysis of analog/RF performance is carried out for 22 nm NMOS devices by transferring WFV effect into flat-band voltage variation based on propagation of variation methodology(POV)methodology.These investigated performance parameters include gate capacitance,trans-conductance,cutoff frequency and trans-conductance efficiency.The experimental results by HSPICE show that these parameters are all impacted by WFV,and their standard deviations are very sensitive to gate voltages.In addition,their statistical distributions differ from each other although they don’t follow normal distribution.