电磁脉冲攻击下片上配电网络IR Drop分析方法
Methodology for IR Drop Analysis of On-Chip Power Distribution Network under Electromagnetic Pulse Attack
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摘要: 电磁脉冲攻击对集成电路的安全具有很强的威胁性. 为了有效抵御电磁脉冲攻击, 针对片上配电网络易受电磁脉冲影响的问题, 提出了一种电磁脉冲攻击下片上配电网络IR drop分布的分析方法. 首先, 在集成电路布局规划阶段, 基于有限元仿真构建片上配电网络模型和电磁脉冲攻击模型, 仿真获得电磁脉冲下配电网络上感应电流密度的分布并计算感应电流, 然后将感应电流加载到配电网络模型上, 使用IR分析工具分析IR drop分布. 基于TSMC 180 nm工艺版图的IR drop分析结果显示, 电磁脉冲攻击能够在电源和地网络中引入2.3 V以上的IR drop. 与现有基于电流分布理论值的分析方法相比, 该分析方法能够更准确地获取电磁脉冲下配电网络中的IR drop分布. 该分析方法可用于指导改进配电网络的设计, 提升抗电磁脉冲攻击能力. 实验结果显示, 增加一组供电端口后, 电源和地网络中的最大IR drop分别降低了28%和24%.Abstract: Electromagnetic pulse attack (EMPA) is a severe threat to the security of integrated circuits. Considering that on-chip power distribution network is highly susceptible to electromagnetic pulse, in order to resist the electromagnetic pulse attack, a method is proposed to analyze the IR drop distribution in the network under EMPA. First, at the integrated circuit floorplanning stage, the on-chip power distribution network model and the EMPA model are constructed based on finite element simulation. The distribution of induced current density on the power distribution network under EMPA is simulated and the induced current is calculated. Next, the induced current is loaded into the power distribution network model, and the IR drop distribution is analyzed using IR analysis tools. The IR drop in a layout based on TSMC 180 nm process is analyzed, and the result shows that the EMPA can trigger IR drops above 2.3 V in the power and ground networks. Compared with existing analysis methods based on the theoretical value of current distribution, the proposed analysis method can obtain the IR drop distribution in the power distribution network under EMPA more accurately. This analysis method can be used to guide the improvement of power distribution networks and enhance the ability to resist EMPA. The experimental results show that after adding a set of power/ground pads, the maximum IR dropss in the power and ground networks are reduced by 28% and 24%, respectively.